TY - JOUR
T1 - Strain-induced anomalous Raman shifting in ferroelectric NbOI2
AU - Cui, Yuanyuan
AU - Deng, Zunyi
AU - Hu, Deng
AU - Wang, Tingjun
AU - Du, Guoshai
AU - Chen, Yabin
AU - Wang, Zhiwei
AU - Hong, Jiawang
AU - Wang, Xueyun
N1 - Publisher Copyright:
© (2025), (American Physical Society). All rights reserved.
PY - 2025/9/19
Y1 - 2025/9/19
N2 - NbOI2 exhibits a notable in-plane anisotropic ferroelectric property and a pronounced second-order nonlinear optical response, which has great potential applications in nanoelectronics. However, the collective behavior of lattice dynamics, which represents the atomic origin of emerging novel phenomena, has not been systematically explored, especially in the context of external strain. In this study, we investigate the phonon responses of NbOI2 under both uniaxial and biaxial tensile strains, applied along two distinct crystallographic orientations. The characteristic P5(LO) Raman mode, which involves in-plane vibrations primarily of Nb-O atoms, demonstrates opposite frequency shifts, with anomalously blue- or redshifts observed when uniaxial tensile strain is applied parallel or perpendicular to the polar axis, respectively. Biaxial strain consistently induced a blueshift in the Raman mode, distinct from that of many conventional two-dimensional materials. These experimental observations are supported by density-functional theory calculations, which reveal the strain-induced deviations in the Nb atomic position-induced pronounced blueshift. This study highlights the distinctive strain sensitivity of NbOI2, offering a useful feedback mechanism for strain manipulation, and providing insights into the potential of NbOI2 for applications in flexible optoelectronics and strain sensors.
AB - NbOI2 exhibits a notable in-plane anisotropic ferroelectric property and a pronounced second-order nonlinear optical response, which has great potential applications in nanoelectronics. However, the collective behavior of lattice dynamics, which represents the atomic origin of emerging novel phenomena, has not been systematically explored, especially in the context of external strain. In this study, we investigate the phonon responses of NbOI2 under both uniaxial and biaxial tensile strains, applied along two distinct crystallographic orientations. The characteristic P5(LO) Raman mode, which involves in-plane vibrations primarily of Nb-O atoms, demonstrates opposite frequency shifts, with anomalously blue- or redshifts observed when uniaxial tensile strain is applied parallel or perpendicular to the polar axis, respectively. Biaxial strain consistently induced a blueshift in the Raman mode, distinct from that of many conventional two-dimensional materials. These experimental observations are supported by density-functional theory calculations, which reveal the strain-induced deviations in the Nb atomic position-induced pronounced blueshift. This study highlights the distinctive strain sensitivity of NbOI2, offering a useful feedback mechanism for strain manipulation, and providing insights into the potential of NbOI2 for applications in flexible optoelectronics and strain sensors.
UR - https://www.scopus.com/pages/publications/105020583550
U2 - 10.1103/j5tz-p9cd
DO - 10.1103/j5tz-p9cd
M3 - Article
AN - SCOPUS:105020583550
SN - 2469-9950
VL - 112
JO - Physical Review B
JF - Physical Review B
IS - 11
ER -