S2Cl2 passivation of GaAs/AlGaAs HBT

Xian'an Cao; Xiying Chen; Zheshen Li; Runzhou Su; Xunming Ding; Xiaoyuan Hou; Feng Qian; Xiaoe Yao; Xiaojian Chen

S₂Cl₂ passivation of GaAs/AlGaAs HBT

Xian'an Cao^*
, Xiying Chen
, Zheshen Li
, Runzhou Su
, Xunming Ding
, Xiaoyuan Hou
, Feng Qian
, Xiaoe Yao
, Xiaojian Chen

^*此作品的通讯作者

Fudan University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

The diluted S₂Cl₂ solution has been employed to treat the GaAs/AlGaAs HBT's and their DC properties have been improved significantly. The study of low-temperature characteristics and real-time passivation have confirmed that the surface recombination velocity of GaAs can be reduced efficiently. S₂Cl₂ treatment is a promising passivation process in the fabrication of GaAs devices.

源语言	英语
页（从-至）	76-80
页数	5
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	18
期	1
出版状态	已出版 - 1月 1997
已对外发布	是

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{bac82b325bbe4546b149c96a7db74025,

title = "S2Cl2 passivation of GaAs/AlGaAs HBT",

abstract = "The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs HBT's and their DC properties have been improved significantly. The study of low-temperature characteristics and real-time passivation have confirmed that the surface recombination velocity of GaAs can be reduced efficiently. S2Cl2 treatment is a promising passivation process in the fabrication of GaAs devices.",

author = "Xian'an Cao and Xiying Chen and Zheshen Li and Runzhou Su and Xunming Ding and Xiaoyuan Hou and Feng Qian and Xiaoe Yao and Xiaojian Chen",

year = "1997",

month = jan,

language = "English",

volume = "18",

pages = "76--80",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "1",

}

TY - JOUR

T1 - S2Cl2 passivation of GaAs/AlGaAs HBT

AU - Cao, Xian'an

AU - Chen, Xiying

AU - Li, Zheshen

AU - Su, Runzhou

AU - Ding, Xunming

AU - Hou, Xiaoyuan

AU - Qian, Feng

AU - Yao, Xiaoe

AU - Chen, Xiaojian

PY - 1997/1

Y1 - 1997/1

N2 - The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs HBT's and their DC properties have been improved significantly. The study of low-temperature characteristics and real-time passivation have confirmed that the surface recombination velocity of GaAs can be reduced efficiently. S2Cl2 treatment is a promising passivation process in the fabrication of GaAs devices.

AB - The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs HBT's and their DC properties have been improved significantly. The study of low-temperature characteristics and real-time passivation have confirmed that the surface recombination velocity of GaAs can be reduced efficiently. S2Cl2 treatment is a promising passivation process in the fabrication of GaAs devices.

UR - https://www.scopus.com/pages/publications/0030656880

M3 - Article

AN - SCOPUS:0030656880

SN - 0253-4177

VL - 18

SP - 76

EP - 80

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 1

ER -

S2Cl2 passivation of GaAs/AlGaAs HBT

摘要

其它文件与链接

指纹

引用此

S₂Cl₂ passivation of GaAs/AlGaAs HBT