TY - JOUR
T1 - Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs
T2 - A study on hydrogen diffusion mitigation and electron modulation
AU - Liu, Bin
AU - Wang, Feng
AU - Li, Xuyang
AU - Kuang, Dan
AU - Liu, Xianwen
AU - Zhang, Shuo
AU - Bao, Zongchi
AU - Yuan, Guangcai
AU - Guo, Jian
AU - Ning, Ce
AU - Shi, Dawei
AU - Yu, Zhinong
N1 - Publisher Copyright:
© 2024 Author(s).
PY - 2024/8/5
Y1 - 2024/8/5
N2 - In this study, we developed an a-InGaZnO (a-IGZO) thin film transistor (TFT) structure that inserts a sputtered AlOx intermediate layer (IL) within the active layer. The IL not only effectively blocks hydrogen (H) diffusion from the gate insulation (GI) layer to the upper region of a-IGZO but also modifies the energy band structure of the bottom channel region and creates a locally low electron concentration that counteracts the excess electron donated by diffused H. Compared to conventional TFTs, the TFT with the IL exhibits impressive electrical characteristics, including a high saturation mobility (μsat) of 14.5 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 6.2 × 108, and a low subthreshold swing (SS) of 0.16 V/dec. Furthermore, this structure exhibits remarkable stability under negative bias stress and negative bias illumination stress, with ΔVth values of 1.1 and 1.5 V, respectively. The integration of the IL provides a promising approach for enhancing the performance of a-IGZO TFTs, paving the way for next-generation display technologies.
AB - In this study, we developed an a-InGaZnO (a-IGZO) thin film transistor (TFT) structure that inserts a sputtered AlOx intermediate layer (IL) within the active layer. The IL not only effectively blocks hydrogen (H) diffusion from the gate insulation (GI) layer to the upper region of a-IGZO but also modifies the energy band structure of the bottom channel region and creates a locally low electron concentration that counteracts the excess electron donated by diffused H. Compared to conventional TFTs, the TFT with the IL exhibits impressive electrical characteristics, including a high saturation mobility (μsat) of 14.5 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 6.2 × 108, and a low subthreshold swing (SS) of 0.16 V/dec. Furthermore, this structure exhibits remarkable stability under negative bias stress and negative bias illumination stress, with ΔVth values of 1.1 and 1.5 V, respectively. The integration of the IL provides a promising approach for enhancing the performance of a-IGZO TFTs, paving the way for next-generation display technologies.
UR - https://www.scopus.com/pages/publications/85200831055
U2 - 10.1063/5.0212863
DO - 10.1063/5.0212863
M3 - Article
AN - SCOPUS:85200831055
SN - 0003-6951
VL - 125
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
M1 - 063504
ER -