Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure

Yu Qi Wang; Xu Wu; Ye Liang Wang; Yan Shao; Tao Lei; Jia Ou Wang; Shi Yu Zhu; Haiming Guo; Ling Xiao Zhao; Gen Fu Chen; Simin Nie; Hong Ming Weng; Kurash Ibrahim; Xi Dai; Zhong Fang; Hong Jun Gao

doi:10.1002/adma.201600575

Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure

Yu Qi Wang
, Xu Wu
, Ye Liang Wang^*
, Yan Shao
, Tao Lei
, Jia Ou Wang
, Shi Yu Zhu
, Haiming Guo
, Ling Xiao Zhao
, Gen Fu Chen
, Simin Nie
, Hong Ming Weng
, Kurash Ibrahim
, Xi Dai
, Zhong Fang
, Hong Jun Gao

^*此作品的通讯作者

CAS - Institute of Physics
CAS - Institute of High Energy Physics
Collaborative Innovation Center of Quantum Matter

科研成果: 期刊稿件 › 文章 › 同行评审

26 引用（Scopus）

摘要

Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe₃/HfTe₅/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe₅ film and a superconducting spectrum in HfTe₃/HfTe₅.

源语言	英语
页（从-至）	5013-5017
页数	5
期刊	Advanced Materials
卷	28
期	25
DOI	https://doi.org/10.1002/adma.201600575
出版状态	已出版 - 7月 2016
已对外发布	是

访问文件

10.1002/adma.201600575

其它文件与链接

链接到 Scopus 的出版物

引用此

Wang, Y. Q., Wu, X., Wang, Y. L., Shao, Y., Lei, T., Wang, J. O., Zhu, S. Y., Guo, H., Zhao, L. X., Chen, G. F., Nie, S., Weng, H. M., Ibrahim, K., Dai, X., Fang, Z., & Gao, H. J. (2016). Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure. Advanced Materials, 28(25), 5013-5017. https://doi.org/10.1002/adma.201600575

@article{429ac33f788d417793cbc3d996bfd6a3,

title = "Spontaneous Formation of a Superconductor{\textendash}Topological Insulator{\textendash}Normal Metal Layered Heterostructure",

abstract = "Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5.",

keywords = "HfTe, HfTe, epitaxial growth, layered heterostructures, superconductivity",

author = "Wang, \{Yu Qi\} and Xu Wu and Wang, \{Ye Liang\} and Yan Shao and Tao Lei and Wang, \{Jia Ou\} and Zhu, \{Shi Yu\} and Haiming Guo and Zhao, \{Ling Xiao\} and Chen, \{Gen Fu\} and Simin Nie and Weng, \{Hong Ming\} and Kurash Ibrahim and Xi Dai and Zhong Fang and Gao, \{Hong Jun\}",

year = "2016",

month = jul,

doi = "10.1002/adma.201600575",

language = "English",

volume = "28",

pages = "5013--5017",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "John Wiley and Sons Inc.",

number = "25",

}

TY - JOUR

T1 - Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure

AU - Wang, Yu Qi

AU - Wu, Xu

AU - Wang, Ye Liang

AU - Shao, Yan

AU - Lei, Tao

AU - Wang, Jia Ou

AU - Zhu, Shi Yu

AU - Guo, Haiming

AU - Zhao, Ling Xiao

AU - Chen, Gen Fu

AU - Nie, Simin

AU - Weng, Hong Ming

AU - Ibrahim, Kurash

AU - Dai, Xi

AU - Fang, Zhong

AU - Gao, Hong Jun

PY - 2016/7

Y1 - 2016/7

N2 - Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5.

AB - Researchers report fabricating a superconductor-topological insulator-normal metal heterostructure with a layered configuration of HfTe3/HfTe5/Hf for the first time. By optimizing the experimental process, they find that this heterostructure can indeed form spontaneously. The atomic structure of the heterostructure has been determined by in situ scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Scanning tunneling spectroscopy (STS) measurements directly reveal a bandgap as large as 60 meV in HfTe5 film and a superconducting spectrum in HfTe3/HfTe5.

KW - HfTe

KW - epitaxial growth

KW - layered heterostructures

KW - superconductivity

UR - https://www.scopus.com/pages/publications/84977139556

U2 - 10.1002/adma.201600575

DO - 10.1002/adma.201600575

M3 - Article

C2 - 27087261

AN - SCOPUS:84977139556

SN - 0935-9648

VL - 28

SP - 5013

EP - 5017

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Spontaneous Formation of a Superconductor–Topological Insulator–Normal Metal Layered Heterostructure

摘要

访问文件

其它文件与链接

学术指纹

引用此