Soft breakdown effects on MOS switch and passive mixer

Anwar Sadat; Yi Liu; Jiann Yuan; Huikai Xie

doi:10.1109/RELPHY.2004.1315435

Soft breakdown effects on MOS switch and passive mixer

Anwar Sadat
, Yi Liu
, Jiann Yuan
, Huikai Xie

University of Central Florida
University of Florida

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

源语言	英语
期刊论文编号	1315435
页（从-至）	653-654
页数	2
期刊	IEEE International Reliability Physics Symposium Proceedings
卷	2004-January
期	January
DOI	https://doi.org/10.1109/RELPHY.2004.1315435
出版状态	已出版 - 2004
已对外发布	是
活动	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, 美国期限: 25 4月 2004 → 29 4月 2004

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10.1109/RELPHY.2004.1315435

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title = "Soft breakdown effects on MOS switch and passive mixer",

abstract = "On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.",

keywords = "MOS switch, Passive mixer, Soft breakdown",

author = "Anwar Sadat and Yi Liu and Jiann Yuan and Huikai Xie",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 ; Conference date: 25-04-2004 Through 29-04-2004",

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AU - Sadat, Anwar

AU - Liu, Yi

AU - Yuan, Jiann

AU - Xie, Huikai

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N2 - On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

AB - On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

KW - MOS switch

KW - Passive mixer

KW - Soft breakdown

UR - https://www.scopus.com/pages/publications/84932124224

U2 - 10.1109/RELPHY.2004.1315435

DO - 10.1109/RELPHY.2004.1315435

M3 - Conference article

AN - SCOPUS:84932124224

SN - 1541-7026

VL - 2004-January

SP - 653

EP - 654

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

IS - January

M1 - 1315435

T2 - 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004

Y2 - 25 April 2004 through 29 April 2004

ER -

Soft breakdown effects on MOS switch and passive mixer

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