Simulations of Transient Behavior and Parasitic Effects for 20 nm Gate Length of PD SOI nMOSFET

In this paper, we report the possible transient behavior for 20 nm partially depleted silicon-on-insulator (PD SOI) n-channel MOSFET studied using Synopsys TCAD program. Tunnelling model is set at Si/SiO2 interface by varying front gate oxide. Parasitic floating body effects also have been observed in the device behavior for both linear and saturation regions, the magnitude of these effects depends on the front gate oxide thickness. For 4 nm gate oxide thickness, the parasitic floating body effect is dominant at low drain voltage.