Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

Zhijian Guo; Guanhua Yang; Fei Mo; Yeliang Wang

doi:10.1109/EDTM65772.2026.11497553

Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

Zhijian Guo
, Guanhua Yang
, Fei Mo^*
, Yeliang Wang^*

^*此作品的通讯作者

Beijing Institute of Technology
CAS - Institute of Microelectronics

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

源语言	英语
主期刊名	10th IEEE Electron Devices Technology and Manufacturing Conference
主期刊副标题	Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9798331585983
DOI	https://doi.org/10.1109/EDTM65772.2026.11497553
出版状态	已出版 - 2026
已对外发布	是
活动	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 - Penang, 马来西亚期限: 1 3月 2026 → 4 3月 2026

出版系列

姓名	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

会议

会议	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
国家/地区	马来西亚
市	Penang
时期	1/03/26 → 4/03/26

访问文件

10.1109/EDTM65772.2026.11497553

其它文件与链接

链接到 Scopus 的出版物

引用此

Guo, Z., Yang, G., Mo, F., & Wang, Y. (2026). Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. 在 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM65772.2026.11497553

Guo, Zhijian ; Yang, Guanhua ; Mo, Fei 等. / Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

@inproceedings{5c8db12b52f441dca8d14fef713873b6,

title = "Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory",

abstract = "In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.",

keywords = "Complementary Ferroelectric FET (CFeFET), Content Addressable Memory (CAM), IGZO-FeFET, Multi-Level Cell (MLC)",

author = "Zhijian Guo and Guanhua Yang and Fei Mo and Yeliang Wang",

note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 ; Conference date: 01-03-2026 Through 04-03-2026",

year = "2026",

doi = "10.1109/EDTM65772.2026.11497553",

language = "English",

series = "10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "10th IEEE Electron Devices Technology and Manufacturing Conference",

address = "United States",

}

Guo, Z, Yang, G, Mo, F & Wang, Y 2026, Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. 在 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Penang, 马来西亚, 1/03/26. https://doi.org/10.1109/EDTM65772.2026.11497553

Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. / Guo, Zhijian; Yang, Guanhua; Mo, Fei 等.
10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

AU - Guo, Zhijian

AU - Yang, Guanhua

AU - Mo, Fei

AU - Wang, Yeliang

PY - 2026

Y1 - 2026

N2 - In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

AB - In this work, we proposed and studied a novel complementary ferroelectric field-effect transistor (CFeFET) using n-type IGZO channel with CuOx insertion layer and p-type silicon channel by TCAD simulations. The TCAD simulation of ultra-compact multi-bit Content Addressable Memory (CAM) design based on an IGZO/Si CFeFET is studied for the first time. The proposed design overcomes the mismatch in memory window (MW) between IGZO-FeFET and Si-FeFET caused by the lack of hole carriers in IGZO-FeFET during erase operation. The 1-bit and multi-bit CAM cell operation are successfully achieved through multi-level cell (MLC) operation of CFeFET with single IGZO-FeFET and Si-FeFET, showing great potential for advanced and high-density non-volatile memory applications.

KW - Complementary Ferroelectric FET (CFeFET)

KW - Content Addressable Memory (CAM)

KW - IGZO-FeFET

KW - Multi-Level Cell (MLC)

UR - https://www.scopus.com/pages/publications/105040815001

U2 - 10.1109/EDTM65772.2026.11497553

DO - 10.1109/EDTM65772.2026.11497553

M3 - Conference contribution

AN - SCOPUS:105040815001

T3 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

BT - 10th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

Y2 - 1 March 2026 through 4 March 2026

ER -

Guo Z, Yang G, Mo F , Wang Y. Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory. 在 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc. 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). doi: 10.1109/EDTM65772.2026.11497553

Simulation study of IGZO (with CuOx)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory

摘要

出版系列

会议

访问文件

其它文件与链接

指纹

引用此

Simulation study of IGZO (with CuO_x)/Si Complementary Ferroelectric FET (CFeFET) for Multi-bit Content Addressable Memory