Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

Jinhai Mao; Li Huang; Yi Pan; Min Gao; Junfeng He; Haitao Zhou; Haiming Guo; Yuan Tian; Qiang Zou; Lizhi Zhang; Haigang Zhang; Yeliang Wang; Shixuan Du; Xingjiang Zhou; A. H. Castro Neto; Hong Jun Gao

doi:10.1063/1.3687190

Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

Jinhai Mao^*
, Li Huang
, Yi Pan
, Min Gao
, Junfeng He
, Haitao Zhou
, Haiming Guo
, Yuan Tian
, Qiang Zou
, Lizhi Zhang
, Haigang Zhang
, Yeliang Wang
, Shixuan Du
, Xingjiang Zhou
, A. H. Castro Neto
, Hong Jun Gao

^*此作品的通讯作者

CAS - Institute of Physics
National University of Singapore

科研成果: 期刊稿件 › 文章 › 同行评审

104 引用（Scopus）

摘要

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

源语言	英语
期刊论文编号	093101
期刊	Applied Physics Letters
卷	100
期	9
DOI	https://doi.org/10.1063/1.3687190
出版状态	已出版 - 27 2月 2012
已对外发布	是

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title = "Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)",

abstract = "We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.",

author = "Jinhai Mao and Li Huang and Yi Pan and Min Gao and Junfeng He and Haitao Zhou and Haiming Guo and Yuan Tian and Qiang Zou and Lizhi Zhang and Haigang Zhang and Yeliang Wang and Shixuan Du and Xingjiang Zhou and \{Castro Neto\}, \{A. H.\} and Gao, \{Hong Jun\}",

year = "2012",

month = feb,

day = "27",

doi = "10.1063/1.3687190",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

AU - Mao, Jinhai

AU - Huang, Li

AU - Pan, Yi

AU - Gao, Min

AU - He, Junfeng

AU - Zhou, Haitao

AU - Guo, Haiming

AU - Tian, Yuan

AU - Zou, Qiang

AU - Zhang, Lizhi

AU - Zhang, Haigang

AU - Wang, Yeliang

AU - Du, Shixuan

AU - Zhou, Xingjiang

AU - Castro Neto, A. H.

AU - Gao, Hong Jun

PY - 2012/2/27

Y1 - 2012/2/27

N2 - We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

AB - We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

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U2 - 10.1063/1.3687190

DO - 10.1063/1.3687190

M3 - Article

AN - SCOPUS:84863229141

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093101

ER -

Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

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