Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu; Huiqi Ye; Gang Wang; Haitao Tian; Wenxin Wang; Wenquan Wang; Baoli Liu; Xavier Marie

doi:10.1186/1556-276X-6-149

Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

Changcheng Hu^*
, Huiqi Ye
, Gang Wang
, Haitao Tian
, Wenxin Wang
, Wenquan Wang
, Baoli Liu
, Xavier Marie

^*此作品的通讯作者

Jilin University
CAS - Institute of Physics
Université de Toulouse

科研成果: 期刊稿件 › 文章 › 同行评审

17 引用（Scopus）

摘要

Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient D_s.

源语言	英语
文章编号	149
期刊	Nanoscale Research Letters
卷	6
期	1
DOI	https://doi.org/10.1186/1556-276X-6-149
出版状态	已出版 - 1月 2011
已对外发布	是

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title = "Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells",

abstract = "Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.",

author = "Changcheng Hu and Huiqi Ye and Gang Wang and Haitao Tian and Wenxin Wang and Wenquan Wang and Baoli Liu and Xavier Marie",

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AU - Hu, Changcheng

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AU - Tian, Haitao

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AU - Wang, Wenquan

AU - Liu, Baoli

AU - Marie, Xavier

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AB - Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of optically excited electrons is about 4 μm at low spin density. Increasing the carrier density yields both a decrease of the spin relaxation time and the spin diffusion coefficient Ds.

UR - https://www.scopus.com/pages/publications/82655177884

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VL - 6

JO - Nanoscale Research Letters

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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells

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