TY - GEN
T1 - Reliability aware simulation flow
T2 - 20th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
AU - Hussin, Razaidi
AU - Gerrer, Louis
AU - Ding, Jie
AU - Amaroso, Salvatore Maria
AU - Wang, Liping
AU - Semicic, Marco
AU - Weckx, Pieter
AU - Franco, Jacopo
AU - Vanderheyden, Annelies
AU - Vanhaeren, Danielle
AU - Horiguchi, Naoto
AU - Kaczer, Ben
AU - Asenov, Asen
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/10/5
Y1 - 2015/10/5
N2 - In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is folloed up by oxide wear out reliability characterization and modelling. Finally statistical compact model libraries for fresh and aged devices are extracted from large samples of TCAD simulation results allowing the performance analysis of a 6T SRAM cell. The calibration procedure has been performed on P and NMOS transistors fabricated and characterized by IMEC, while Glasgow University performed the TCAD reverse engineering and calibration, and the statistical simulations using dedicated Gold Standard Simulations tools.
AB - In this paper, we present a simulation flow based on TCAD model calibration against experimental transistor measurement and doping profile reverse engineering. Further the physical astatistical variability simulations at TCAD level are also adjusted to match the statistical measurement. This is folloed up by oxide wear out reliability characterization and modelling. Finally statistical compact model libraries for fresh and aged devices are extracted from large samples of TCAD simulation results allowing the performance analysis of a 6T SRAM cell. The calibration procedure has been performed on P and NMOS transistors fabricated and characterized by IMEC, while Glasgow University performed the TCAD reverse engineering and calibration, and the statistical simulations using dedicated Gold Standard Simulations tools.
KW - Compact model
KW - Statistical Reliability
KW - Statistical Variability
KW - TCAD simulation
KW - aging
UR - http://www.scopus.com/inward/record.url?scp=84959340502&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2015.7292281
DO - 10.1109/SISPAD.2015.7292281
M3 - Conference contribution
AN - SCOPUS:84959340502
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 152
EP - 155
BT - 2015 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2015
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 9 September 2015 through 11 September 2015
ER -