Rectification magnetoresistance device: Experimental realization and theoretical simulation

Kun Zhang; Qikun Huang; Yi Yan; Xiaolin Wang; Jing Wang; Shishou Kang; Yufeng Tian

doi:10.1063/1.4968784

Rectification magnetoresistance device: Experimental realization and theoretical simulation

Kun Zhang
, Qikun Huang
, Yi Yan
, Xiaolin Wang
, Jing Wang
, Shishou Kang
, Yufeng Tian^*

^*此作品的通讯作者

Shandong University
University of California at Santa Barbara
University of Wollongong

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

源语言	英语
文章编号	213503
期刊	Applied Physics Letters
卷	109
期	21
DOI	https://doi.org/10.1063/1.4968784
出版状态	已出版 - 21 11月 2016
已对外发布	是

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AU - Zhang, Kun

AU - Huang, Qikun

AU - Yan, Yi

AU - Wang, Xiaolin

AU - Wang, Jing

AU - Kang, Shishou

AU - Tian, Yufeng

PY - 2016/11/21

Y1 - 2016/11/21

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AB - A unique technique has been proposed to realize rectification magnetoresistance (RMR) by combining a commercial diode and a magnetoresistance component in parallel. The observed RMR could be greatly tuned in a wide range by applying direct current and alternating current simultaneously to the device. Moreover, a quantitative theoretical model has been established, which well explained both the observed RMR and the electrical manipulation behavior. The highly tunable RMR and the correlated magnetoelectric functionalities provide an alternative route for developing multi-functional spintronics devices.

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Rectification magnetoresistance device: Experimental realization and theoretical simulation

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