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Recent progress in 2D group-VA semiconductors: From theory to experiment

  • Shengli Zhang
  • , Shiying Guo
  • , Zhongfang Chen
  • , Yeliang Wang
  • , Hongjun Gao
  • , Julio Gómez-Herrero
  • , Pablo Ares
  • , Félix Zamora*
  • , Zhen Zhu
  • , Haibo Zeng
  • *此作品的通讯作者
  • Nanjing University of Science and Technology
  • University of Puerto Rico
  • University of Chinese Academy of Sciences
  • Universidad Autónoma de Madrid
  • University of California at Santa Barbara

科研成果: 期刊稿件文献综述同行评审

摘要

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

源语言英语
页(从-至)982-1021
页数40
期刊Chemical Society Reviews
47
3
DOI
出版状态已出版 - 7 2月 2018
已对外发布

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