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Recent progress and challenges of infrared quantum dots

  • Yin Hu
  • , Kaiyao Xin
  • , Siqi Qiu
  • , Jianwen Hu
  • , Pan Wang
  • , Shenqiang Zhai
  • , Guozhen Shen
  • , Juehan Yang*
  • , Zhongming Wei*
  • *此作品的通讯作者
  • CAS - Institute of Semiconductors
  • University of Chinese Academy of Sciences
  • Beijing Institute of Technology

科研成果: 期刊稿件文献综述同行评审

摘要

This review explores the recent advancements in the field of infrared quantum dot (QD) materials, focusing on their synthesis, characterization, and applications. In recent years, precise control of the physical size and modulation of the chemical components in QDs has enabled efficient and tunable photoelectric properties. The distinctive emission and absorption properties of infrared QDs indicate their importance across diverse applications. This review covers the fundamental physical properties of QDs; elucidates their regulatory mechanisms; discusses their synthesis methods; and explores their applications in photodetectors, light-emitting diodes, lasers, photovoltaic devices, and others. Finally, it addresses existing challenges and outlines prospective future opportunities in the field of infrared QD technology.

源语言英语
文章编号181401
期刊Science China Information Sciences
68
8
DOI
出版状态已出版 - 8月 2025
已对外发布

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