摘要
Blue emissive quantum dots are key materials in fabricating quantum-dot light-emitting diodes for display applications. Up to date, most of the previous blue emissive quantum dots are based on quantum dots with type-I core-shell structure. In this work, we report pure-blue emissive ZnSe/CdxZn1−xS/ZnS quantum dots with type-II core-shell structure, which show high photoluminescence quantum yield over 90%. The type-II structure was investigated by applying time-resolved photoluminescence and transient absorption measurements, illustrating the extended photoluminescence decay lifetime of ZnSe/CdxZn1−xS quantum dots as well as the transition of bleaching peak from the valence band of ZnSe to the conduction band of CdZnS. We further fabricated ZnSe/CdxZn1−xS/ZnS quantum dots based electroluminescence devices, achieving a maximum external quantum efficiency of 6.7% and a maximum luminance of 39,766 cd·m−2. (Figure presented.)
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 10476-10482 |
| 页数 | 7 |
| 期刊 | Nano Research |
| 卷 | 17 |
| 期 | 12 |
| DOI | |
| 出版状态 | 已出版 - 12月 2024 |
| 已对外发布 | 是 |
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