TY - JOUR
T1 - Progress in nanometer semiconductor films
AU - Lin, Hongyi
AU - Wang, Yue
PY - 1995
Y1 - 1995
N2 - Hydrogenated nano-crystalline silicon (nc-Si:H) films have been prepared by plasma enhanced chemical vapor deposition (PECVD) method under excellently controlled conditions of deposition. The nc-Si:H films consist of a mass of nanometer scale grains and an interfacial region, i.e. the crystalline phase and the grain boundaries phase. It is especially valuable for some devices, for example, quantum function devices and film sensors etc.
AB - Hydrogenated nano-crystalline silicon (nc-Si:H) films have been prepared by plasma enhanced chemical vapor deposition (PECVD) method under excellently controlled conditions of deposition. The nc-Si:H films consist of a mass of nanometer scale grains and an interfacial region, i.e. the crystalline phase and the grain boundaries phase. It is especially valuable for some devices, for example, quantum function devices and film sensors etc.
KW - Nano-crystalline silicon film
KW - Quantum function device
KW - Semiconductor materials / nano-crystalline materials
UR - https://www.scopus.com/pages/publications/71149117134
M3 - Article
AN - SCOPUS:71149117134
SN - 1001-0645
VL - 15
SP - 125
EP - 131
JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
IS - 2
ER -