TY - JOUR
T1 - Probing the Operation of Quantum-Dot Light-Emitting Diodes Using Electrically Pumped Transient Absorption Spectroscopy
AU - Yan, Xianchang
AU - Chen, Cuili
AU - Wu, Boning
AU - Sun, Fengke
AU - Bao, Hui
AU - Tian, Wenming
AU - Chang, Shuai
AU - Zhong, Haizheng
AU - Jin, Shengye
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/8/22
Y1 - 2024/8/22
N2 - The quantum-dot light-emitting diode (QLED) is a new generation light emission source that holds great promise for display and lighting applications. Understanding the dynamics of electrons and holes in QLEDs during their operation is crucial for future QLED optimization, but a time-resolved technology capable of characterizing electrons is still lacking. To tackle this challenge, we develop a unique electrically pumped transient absorption (E-TA) spectroscopy to probe the density of electrons in the QD layer with a nanosecond time resolution. The E-TA result provides a comprehensive understanding of the electron dynamics in QLEDs by quantifying the electron injection time after external voltage on, electron release time after external voltage off, and equilibrated electron density (Ne) in the QD layer during device operation. By combining E-TA technology with time-resolved electroluminescence and transient current measurements, we present a comprehensive overview of the dynamics of both electrons and holes in a QLED during operation.
AB - The quantum-dot light-emitting diode (QLED) is a new generation light emission source that holds great promise for display and lighting applications. Understanding the dynamics of electrons and holes in QLEDs during their operation is crucial for future QLED optimization, but a time-resolved technology capable of characterizing electrons is still lacking. To tackle this challenge, we develop a unique electrically pumped transient absorption (E-TA) spectroscopy to probe the density of electrons in the QD layer with a nanosecond time resolution. The E-TA result provides a comprehensive understanding of the electron dynamics in QLEDs by quantifying the electron injection time after external voltage on, electron release time after external voltage off, and equilibrated electron density (Ne) in the QD layer during device operation. By combining E-TA technology with time-resolved electroluminescence and transient current measurements, we present a comprehensive overview of the dynamics of both electrons and holes in a QLED during operation.
UR - https://www.scopus.com/pages/publications/85201428630
U2 - 10.1021/acs.jpclett.4c02127
DO - 10.1021/acs.jpclett.4c02127
M3 - Article
C2 - 39141893
AN - SCOPUS:85201428630
SN - 1948-7185
VL - 15
SP - 8593
EP - 8599
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 33
ER -