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Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopies

  • Yadong Wang*
  • , Fadil Iyikanat
  • , Habib Rostami
  • , Xueyin Bai
  • , Xuerong Hu
  • , Susobhan Das
  • , Yunyun Dai
  • , Luojun Du
  • , Yi Zhang
  • , Shisheng Li
  • , Harri Lipsanen
  • , F. Javier García de Abajo*
  • , Zhipei Sun*
  • *此作品的通讯作者
  • Aalto University
  • The Barcelona Institute of Science and Technology
  • KTH Royal Institute of Technology
  • National Institute for Materials Science Tsukuba
  • ICREA

科研成果: 期刊稿件文章同行评审

摘要

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands are probed with a high relative contrast of up to ≥200 via broadband (from ≈1.79 to 3.10 eV) static third-harmonic spectroscopy (THS), which is further supported by theoretical calculations. Moreover, transient THS is introduced to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ≈94% at ≈2.18 eV, providing direct evidence of dominant carrier relaxation processes associated with carrier–exciton and carrier–phonon interactions. The results indicate that static and transient THS are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

源语言英语
文章编号2107104
期刊Advanced Materials
34
3
DOI
出版状态已出版 - 20 1月 2022
已对外发布

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