Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

Ghulam Nabi; Chuanbao Cao; Waheed S. Khan; Sajad Hussain; Zahid Usman; Noor Abass Din Khattak; Zulfiqar Ali; Faheem K. Butt; Sajjad Hussain Shah; Muhammad Safdar

doi:10.1016/j.matlet.2011.08.049

Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

Ghulam Nabi
, Chuanbao Cao^*
, Waheed S. Khan
, Sajad Hussain
, Zahid Usman
, Noor Abass Din Khattak
, Zulfiqar Ali
, Faheem K. Butt
, Sajjad Hussain Shah
, Muhammad Safdar

^*此作品的通讯作者

材料学院

Beijing Institute of Technology
Gomal University

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH₃ atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH₃. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm^{- 1} and a threshold field of 8.96 V μm^{- 1} which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.

源语言	英语
页（从-至）	50-53
页数	4
期刊	Materials Letters
卷	66
期	1
DOI	https://doi.org/10.1016/j.matlet.2011.08.049
出版状态	已出版 - 1 1月 2012

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title = "Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties",

abstract = "We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH3 atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH3. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm- 1 and a threshold field of 8.96 V μm- 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.",

keywords = "Chemical vapor deposition, Field emission properties, Grass-like GaN, Semiconductors",

author = "Ghulam Nabi and Chuanbao Cao and Khan, \{Waheed S.\} and Sajad Hussain and Zahid Usman and Khattak, \{Noor Abass Din\} and Zulfiqar Ali and Butt, \{Faheem K.\} and Shah, \{Sajjad Hussain\} and Muhammad Safdar",

year = "2012",

month = jan,

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doi = "10.1016/j.matlet.2011.08.049",

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TY - JOUR

T1 - Preparation of grass-like GaN nanostructures

T2 - Its PL and excellent field emission properties

AU - Nabi, Ghulam

AU - Cao, Chuanbao

AU - Khan, Waheed S.

AU - Hussain, Sajad

AU - Usman, Zahid

AU - Khattak, Noor Abass Din

AU - Ali, Zulfiqar

AU - Butt, Faheem K.

AU - Shah, Sajjad Hussain

AU - Safdar, Muhammad

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH3 atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH3. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm- 1 and a threshold field of 8.96 V μm- 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.

AB - We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH3 atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH3. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm- 1 and a threshold field of 8.96 V μm- 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics.

KW - Chemical vapor deposition

KW - Field emission properties

KW - Grass-like GaN

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/80052845235

U2 - 10.1016/j.matlet.2011.08.049

DO - 10.1016/j.matlet.2011.08.049

M3 - Article

AN - SCOPUS:80052845235

SN - 0167-577X

VL - 66

SP - 50

EP - 53

JO - Materials Letters

JF - Materials Letters

IS - 1

ER -

Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties

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