Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

C. Wang; H. J. Qu; W. X. Chen; G. Z. Ran; H. Y. Yu; B. Niu; J. Q. Pan; W. Wang

doi:10.1063/1.4792508

Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

C. Wang^*
, H. J. Qu
, W. X. Chen
, G. Z. Ran
, H. Y. Yu
, B. Niu
, J. Q. Pan
, W. Wang

^*此作品的通讯作者

Peking University
CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

源语言	英语
期刊论文编号	061112
期刊	Applied Physics Letters
卷	102
期	6
DOI	https://doi.org/10.1063/1.4792508
出版状态	已出版 - 11 2月 2013
已对外发布	是

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title = "Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode",

abstract = "Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.",

author = "C. Wang and Qu, \{H. J.\} and Chen, \{W. X.\} and Ran, \{G. Z.\} and Yu, \{H. Y.\} and B. Niu and Pan, \{J. Q.\} and W. Wang",

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T1 - Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

AU - Wang, C.

AU - Qu, H. J.

AU - Chen, W. X.

AU - Ran, G. Z.

AU - Yu, H. Y.

AU - Niu, B.

AU - Pan, J. Q.

AU - Wang, W.

PY - 2013/2/11

Y1 - 2013/2/11

N2 - Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

AB - Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.

UR - https://www.scopus.com/pages/publications/84874230649

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DO - 10.1063/1.4792508

M3 - Article

AN - SCOPUS:84874230649

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061112

ER -

Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

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