Piezoresistance behaviors of ultra-strained SiC nanowires

In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10 was achieved for a diamond-structure SiC NW with a 111 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10^-11 Pa^-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.