TY - GEN
T1 - Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides
AU - Sadi, Toufik
AU - Badami, Oves
AU - Georgiev, Vihar
AU - Ding, Jie
AU - Asenov, Asen
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - Nowadays, resistive random-Access memories (RRAMs) are widely considered as the next generation of non-volatile memory devices. Here, we employ a physics-based multi-scale kinetic Monte Carlo simulator to study the microscopic transport properties and characteristics of promising RRAM devices based on transition metal oxides, specifically hafnium oxide (HfOx) based structures. The simulator handles self-consistently electronic charge and thermal transport in the three-dimensional (3D) space, allowing the realistic study of the dynamics of conductive filaments responsible for switching. By presenting insightful results, we argue that using a simulator of a 3D nature, accounting for self-consistent fields and self-heating, is necessary for understanding switching in RRAMs. As an example, we look into the unipolar operation mode, by showing how only the correct inclusion of self-heating allows the proper reconstruction of the switching behaviour. The simulation framework is well-suited for exploring the operation and reliability of RRAMs, providing a reliable computational tool for the optimization of existing device technologies and the path finding and development of new RRAM options.
AB - Nowadays, resistive random-Access memories (RRAMs) are widely considered as the next generation of non-volatile memory devices. Here, we employ a physics-based multi-scale kinetic Monte Carlo simulator to study the microscopic transport properties and characteristics of promising RRAM devices based on transition metal oxides, specifically hafnium oxide (HfOx) based structures. The simulator handles self-consistently electronic charge and thermal transport in the three-dimensional (3D) space, allowing the realistic study of the dynamics of conductive filaments responsible for switching. By presenting insightful results, we argue that using a simulator of a 3D nature, accounting for self-consistent fields and self-heating, is necessary for understanding switching in RRAMs. As an example, we look into the unipolar operation mode, by showing how only the correct inclusion of self-heating allows the proper reconstruction of the switching behaviour. The simulation framework is well-suited for exploring the operation and reliability of RRAMs, providing a reliable computational tool for the optimization of existing device technologies and the path finding and development of new RRAM options.
KW - Kinetic Monte Carlo (KMC)
KW - multi-scale models
KW - resistive random-Access memories (RRAMs)
KW - transport phenomena
UR - https://www.scopus.com/pages/publications/85074342859
U2 - 10.1109/SISPAD.2019.8870391
DO - 10.1109/SISPAD.2019.8870391
M3 - Conference contribution
AN - SCOPUS:85074342859
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
BT - Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
A2 - Driussi, Francesco
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
Y2 - 4 September 2019 through 6 September 2019
ER -