TY - JOUR
T1 - Phase transition and electrocaloric effect in PbZr0.2Ti0.8O3thin films
T2 - insights from phase-field simulations
AU - Li, Xujing
AU - Huang, Houbing
AU - Tao, Ye
AU - Hu, Fengxia
AU - Wang, Jian Tao
N1 - Publisher Copyright:
Creative Commons Attribution license.
PY - 2026/1/28
Y1 - 2026/1/28
N2 - Ferroelectric (FE) ultrathin films tend to favor a homogeneous polar state at strong interfacial bound charge screening conditions. Reducing screening parameter (β) may induce topological textures such as vortices, labyrinth stripes, and skyrmion bubbles (sk-bs). Here, we exploreβ- and temperature-induced phase transitions of polarization reversal in FE PbZr0.2Ti0.8O3(PZT) thin films using phase-field simulations under a 1% compressive strain. The results unveil a phase diagram comprising polarization reversal, hysteresis loop and topological structures. At room temperature, a phase transition from FE to antiferroelectric-like (AFE*) state occurs atβ∼0.53. At increasing temperatures, the FE and AFE* phases convert to a paraelectric state and form a tricritical point atβ∼0.78 andT∼ 770 K. Notably, at the phase boundary, a coexistence region of uniform polarization and isolated sk-bs emerges in a narrow screening range, which can be modulated by an applied electric field. Moreover, simulations of thermal effects on the FE to AFE* phase transition via the indirect method reveal a large electrocaloric effect around room temperature at low electric fields. Our findings uncover rich phenomena and elucidate underlying mechanisms in FE thin films, which hold promise for advanced device applications.
AB - Ferroelectric (FE) ultrathin films tend to favor a homogeneous polar state at strong interfacial bound charge screening conditions. Reducing screening parameter (β) may induce topological textures such as vortices, labyrinth stripes, and skyrmion bubbles (sk-bs). Here, we exploreβ- and temperature-induced phase transitions of polarization reversal in FE PbZr0.2Ti0.8O3(PZT) thin films using phase-field simulations under a 1% compressive strain. The results unveil a phase diagram comprising polarization reversal, hysteresis loop and topological structures. At room temperature, a phase transition from FE to antiferroelectric-like (AFE*) state occurs atβ∼0.53. At increasing temperatures, the FE and AFE* phases convert to a paraelectric state and form a tricritical point atβ∼0.78 andT∼ 770 K. Notably, at the phase boundary, a coexistence region of uniform polarization and isolated sk-bs emerges in a narrow screening range, which can be modulated by an applied electric field. Moreover, simulations of thermal effects on the FE to AFE* phase transition via the indirect method reveal a large electrocaloric effect around room temperature at low electric fields. Our findings uncover rich phenomena and elucidate underlying mechanisms in FE thin films, which hold promise for advanced device applications.
KW - antiferroelectric behavior
KW - electrocaloric effect
KW - ferroelectric material
KW - phase-field simulation
KW - topological domain structure
UR - https://www.scopus.com/pages/publications/105028869196
U2 - 10.1088/1361-648X/ae350e
DO - 10.1088/1361-648X/ae350e
M3 - Article
C2 - 41499959
AN - SCOPUS:105028869196
SN - 0953-8984
VL - 38
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 3
ER -