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Phase-Field Simulation of Void Evolution Under Irradiation: A Reaction–Diffusion Model

  • Xiaoming Shi*
  • , Zheng Wang
  • , Tianhao Gao
  • , Guoping Cao
  • , Zhuhong Liu
  • , Houbing Huang
  • , Xingqiao Ma*
  • , Sanqiang Shi
  • *此作品的通讯作者
  • University of Science and Technology Beijing
  • Guilin University of Aerospace Technology
  • Hong Kong Polytechnic University

科研成果: 期刊稿件文章同行评审

摘要

We propose a reaction–diffusion phase-field model to simulate the microstructure evolution of voids in systems with low vacancy concentration under irradiation. In this model, void growth and shrinkage are governed by reactions between vacancies/interstitials and the void surface, while an order parameter is introduced to describe void morphology. By avoiding the sharp increase in vacancy concentration near the void interface, the model enables the simulation of void evolution in low vacancy concentration matrices over enlarged time scales. When combined with classical nucleation theory, the approach enables quantitative, accurate three-dimensional simulations of slow void evolution processes, achieving comparability with rate theory models. Numerical results demonstrate that the model accurately captures the evolution of voids under dilution conditions. At the same time, its inherent scalability makes it broadly applicable to other material systems characterized by low solute concentrations.

源语言英语
文章编号278
期刊Crystals
16
4
DOI
出版状态已出版 - 4月 2026

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