P-type InP thin films prepared by a non-vacuum process for photoelectrochemical water splitting

Zequn Chen; Huihui Chen; Qinfeng Zhao; Chuanbao Cao; Zhuo Chen

doi:10.1088/1757-899X/612/2/022092

P-type InP thin films prepared by a non-vacuum process for photoelectrochemical water splitting

Zequn Chen
, Huihui Chen
, Qinfeng Zhao
, Chuanbao Cao
, Zhuo Chen^*

^*此作品的通讯作者

材料学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 会议文章 › 同行评审

2 引用（Scopus）

摘要

Photoelectrochemical (PEC) water splitting has been considered as a promising way to produce hydrogen production. Herein, we present an inexpensive and simple method for preparing high active p-type InP thin films photocathode with Zn doped at 500 °C. The amount of dopant was optimized to obtain the high PEC activity films. Electrical measurements indicated that the optimized film had the hole mobility of 350 cm²V^-1s^-1 and carrier density of 7.510¹⁷ cm³. Optical measurements demonstrated the high absorption of 90% in 450-750 nm, and the bandgaps of the samples ranged from 2.08 eV to 2.3 eV. PEC test showed that the onset potential of the optimized InP thin film was about 0.35 V vs. RHE and the saturation photocurrent of 8 mA/cm² occurred at -0.3 V vs. RHE. These results indicated that our p type InP thin films were a potential material in PEC devices.

源语言	英语
文章编号	022092
期刊	IOP Conference Series: Materials Science and Engineering
卷	612
期	2
DOI	https://doi.org/10.1088/1757-899X/612/2/022092
出版状态	已出版 - 21 10月 2019
活动	2019 6th International Conference on Advanced Composite Materials and Manufacturing Engineering, ACMME 2019 - Xishuangbanna, Yunnan, 中国期限: 22 6月 2019 → 23 6月 2019

联合国可持续发展目标

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可持续发展目标 7 经济适用的清洁能源

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title = "P-type InP thin films prepared by a non-vacuum process for photoelectrochemical water splitting",

abstract = "Photoelectrochemical (PEC) water splitting has been considered as a promising way to produce hydrogen production. Herein, we present an inexpensive and simple method for preparing high active p-type InP thin films photocathode with Zn doped at 500 °C. The amount of dopant was optimized to obtain the high PEC activity films. Electrical measurements indicated that the optimized film had the hole mobility of 350 cm2V-1s-1 and carrier density of 7.51017 cm3. Optical measurements demonstrated the high absorption of 90\% in 450-750 nm, and the bandgaps of the samples ranged from 2.08 eV to 2.3 eV. PEC test showed that the onset potential of the optimized InP thin film was about 0.35 V vs. RHE and the saturation photocurrent of 8 mA/cm2 occurred at -0.3 V vs. RHE. These results indicated that our p type InP thin films were a potential material in PEC devices.",

author = "Zequn Chen and Huihui Chen and Qinfeng Zhao and Chuanbao Cao and Zhuo Chen",

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T1 - P-type InP thin films prepared by a non-vacuum process for photoelectrochemical water splitting

AU - Chen, Zequn

AU - Chen, Huihui

AU - Zhao, Qinfeng

AU - Cao, Chuanbao

AU - Chen, Zhuo

PY - 2019/10/21

Y1 - 2019/10/21

N2 - Photoelectrochemical (PEC) water splitting has been considered as a promising way to produce hydrogen production. Herein, we present an inexpensive and simple method for preparing high active p-type InP thin films photocathode with Zn doped at 500 °C. The amount of dopant was optimized to obtain the high PEC activity films. Electrical measurements indicated that the optimized film had the hole mobility of 350 cm2V-1s-1 and carrier density of 7.51017 cm3. Optical measurements demonstrated the high absorption of 90% in 450-750 nm, and the bandgaps of the samples ranged from 2.08 eV to 2.3 eV. PEC test showed that the onset potential of the optimized InP thin film was about 0.35 V vs. RHE and the saturation photocurrent of 8 mA/cm2 occurred at -0.3 V vs. RHE. These results indicated that our p type InP thin films were a potential material in PEC devices.

AB - Photoelectrochemical (PEC) water splitting has been considered as a promising way to produce hydrogen production. Herein, we present an inexpensive and simple method for preparing high active p-type InP thin films photocathode with Zn doped at 500 °C. The amount of dopant was optimized to obtain the high PEC activity films. Electrical measurements indicated that the optimized film had the hole mobility of 350 cm2V-1s-1 and carrier density of 7.51017 cm3. Optical measurements demonstrated the high absorption of 90% in 450-750 nm, and the bandgaps of the samples ranged from 2.08 eV to 2.3 eV. PEC test showed that the onset potential of the optimized InP thin film was about 0.35 V vs. RHE and the saturation photocurrent of 8 mA/cm2 occurred at -0.3 V vs. RHE. These results indicated that our p type InP thin films were a potential material in PEC devices.

UR - https://www.scopus.com/pages/publications/85074473972

U2 - 10.1088/1757-899X/612/2/022092

DO - 10.1088/1757-899X/612/2/022092

M3 - Conference article

AN - SCOPUS:85074473972

SN - 1757-8981

VL - 612

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 2

M1 - 022092

T2 - 2019 6th International Conference on Advanced Composite Materials and Manufacturing Engineering, ACMME 2019

Y2 - 22 June 2019 through 23 June 2019

ER -

P-type InP thin films prepared by a non-vacuum process for photoelectrochemical water splitting

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