TY - JOUR
T1 - One-step synthesis of metal/semiconductor heterostructure NbS2/MoS2
AU - Fu, Qundong
AU - Wang, Xiaowei
AU - Zhou, Jiadong
AU - Xia, Juan
AU - Zeng, Qingsheng
AU - Lv, Danhui
AU - Zhu, Chao
AU - Wang, Xiaolei
AU - Shen, Yue
AU - Li, Xiaomin
AU - Hua, Younan
AU - Liu, Fucai
AU - Shen, Zexiang
AU - Jin, Chuanhong
AU - Liu, Zheng
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/6/26
Y1 - 2018/6/26
N2 - Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.
AB - Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.
UR - https://www.scopus.com/pages/publications/85046673141
U2 - 10.1021/acs.chemmater.7b05117
DO - 10.1021/acs.chemmater.7b05117
M3 - Article
AN - SCOPUS:85046673141
SN - 0897-4756
VL - 30
SP - 4001
EP - 4007
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 12
ER -