摘要
The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn 3P 2 nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 779-788 |
| 页数 | 10 |
| 期刊 | Nanoscale Research Letters |
| 卷 | 4 |
| 期 | 8 |
| DOI | |
| 出版状态 | 已出版 - 2009 |
| 已对外发布 | 是 |
学术指纹
探究 'One-dimensional nanostructures and devices of II-V group semiconductors' 的科研主题。它们共同构成独一无二的学术指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver