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Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

  • Shuigang Xu
  • , Junying Shen
  • , Gen Long
  • , Zefei Wu
  • , Zhi Qiang Bao
  • , Cheng Cheng Liu
  • , Xiao Xiao
  • , Tianyi Han
  • , Jiangxiazi Lin
  • , Yingying Wu
  • , Huanhuan Lu
  • , Jianqiang Hou
  • , Liheng An
  • , Yuanwei Wang
  • , Yuan Cai
  • , K. M. Ho
  • , Yuheng He
  • , Rolf Lortz
  • , Fan Zhang*
  • , Ning Wang
  • *此作品的通讯作者
  • Hong Kong University of Science and Technology
  • University of Texas at Dallas

科研成果: 期刊稿件文章同行评审

摘要

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

源语言英语
期刊论文编号067702
期刊Physical Review Letters
118
6
DOI
出版状态已出版 - 10 2月 2017
已对外发布

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