摘要
A diode-pumped passively mode-locked Nd-doped La3Ga5SiO14 (Nd:LGS) laser is realized by using a semiconductor saturable absorber mirror. With the pump power of 2 W, we obtain a 532 nm self-frequency doubling (SFD) laser together with a 10.9 ps fundamental laser at the repetition rate of 173.7 MHz. To the best of our knowledge, it is the first time for self-frequency doubling in the diode-pumped mode-locked Nd:LGS laser. Benefited from the diode lasers and its self-frequency doubling property, Nd:LGS could be a potential candidate for compact, stable and cheap ultrafast green laser sources.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 014206 |
| 期刊 | Chinese Physics Letters |
| 卷 | 32 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1 1月 2015 |
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