Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

Chuanxue Sun; Xiaoyu Dou; Zhichao Du; Haitao Dong; Xiaopeng Li; Pengpeng Sang; Xuepeng Zhan; Fei Mo; Jixuan Wu; Jiezhi Chen

doi:10.3390/mi16020141

Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

Chuanxue Sun
, Xiaoyu Dou
, Zhichao Du
, Haitao Dong
, Xiaopeng Li
, Pengpeng Sang
, Xuepeng Zhan
, Fei Mo
, Jixuan Wu^*
, Jiezhi Chen^*

^*此作品的通讯作者

集成电路与电子学院

Shandong University

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

源语言	英语
期刊论文编号	141
期刊	Micromachines
卷	16
期	2
DOI	https://doi.org/10.3390/mi16020141
出版状态	已出版 - 2月 2025

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title = "Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs",

abstract = "This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.",

keywords = "IGZO, elevated-metal metal-oxide (EMMO), oxygen vacancies, positive bias stress (PBS)",

author = "Chuanxue Sun and Xiaoyu Dou and Zhichao Du and Haitao Dong and Xiaopeng Li and Pengpeng Sang and Xuepeng Zhan and Fei Mo and Jixuan Wu and Jiezhi Chen",

note = "Publisher Copyright: {\textcopyright} 2025 by the authors.",

year = "2025",

month = feb,

doi = "10.3390/mi16020141",

language = "English",

volume = "16",

journal = "Micromachines",

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T1 - Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

AU - Sun, Chuanxue

AU - Dou, Xiaoyu

AU - Du, Zhichao

AU - Dong, Haitao

AU - Li, Xiaopeng

AU - Sang, Pengpeng

AU - Zhan, Xuepeng

AU - Mo, Fei

AU - Wu, Jixuan

AU - Chen, Jiezhi

PY - 2025/2

Y1 - 2025/2

N2 - This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

AB - This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.

KW - IGZO

KW - elevated-metal metal-oxide (EMMO)

KW - oxygen vacancies

KW - positive bias stress (PBS)

UR - https://www.scopus.com/pages/publications/85218994981

U2 - 10.3390/mi16020141

DO - 10.3390/mi16020141

M3 - Article

AN - SCOPUS:85218994981

SN - 2072-666X

VL - 16

JO - Micromachines

JF - Micromachines

IS - 2

M1 - 141

ER -

Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

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