摘要
Dislocations widely exist in two-dimensional (2D) materials and play an important role in the tunability of various properties. Although the atomic dislocations of 2D materials have been well analyzed, little is known about the dislocations of moiré patterns. Here, we report the atomic-resolution scanning tunneling microscopy studies of the moiré pattern dislocation in monolayer hexagonal boron nitride (h-BN) on Pt(111). The h-BN moiré pattern has three phases with different orientations. Intriguingly, the moiré pattern dislocations are observed, while the atomic lattices of h-BN are continuous across the step edges. These dislocations are related to the atomic lattice translation of the underneath Pt(111) substrate. Our findings provide an effective way to explore the moiré pattern dislocations, which could promote the research and application of 2D stacking superlattices.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 891-896 |
| 页数 | 6 |
| 期刊 | ACS Applied Electronic Materials |
| 卷 | 4 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 22 2月 2022 |
指纹
探究 'Moiré Pattern Dislocation in Continuous Atomic Lattice of Monolayer h-BN' 的科研主题。它们共同构成独一无二的指纹。引用此
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