跳到主要导航 跳到搜索 跳到主要内容

Modeling and analysis of vertical noise coupling in TSV-based 3D mixed-signal integration

  • Beijing Institute of Technology
  • Rensselaer Polytechnic Institute

科研成果: 期刊稿件文章同行评审

摘要

This paper reports on modeling and analysis of vertical noise coupling between adjacent chips in TSVs-based 3D mixed-signal integration. The coupling between clock channel in digital IC and channel routing wires (CRWs) in analog IC is studied in both frequency domain and time domain. According to physical architecture, a broadband equivalent circuit model of vertical noise coupling is proposed. The comparison of S parameters from full-wave electromagnetic (EM) simulation and a circuit model shows a good agreement. The coupling mechanism is discussed from transfer impedance between clock channel and CRWs. The impacts of design variables (such as geometry dimension, 3D stacking process, layout floorplan) on noise coupling are investigated. Four approaches are proposed to reduce the vertical noise coupling and compared with the baseline model. Finally, the time domain analysis shows that the rising/falling time determines peak-to-peak noise voltage and the far-end exhibits larger noise than the near-end.

源语言英语
页(从-至)6-14
页数9
期刊Microelectronic Engineering
156
DOI
出版状态已出版 - 20 4月 2016

学术指纹

探究 'Modeling and analysis of vertical noise coupling in TSV-based 3D mixed-signal integration' 的科研主题。它们共同构成独一无二的学术指纹。

引用此