摘要
An on-chip dual-band bandpass filter (BPF) with wide bandwidth and low insertion loss is designed using 0.25-μm gallium arsenide (GaAs) technology. The proposed BPF is based on a multi-stub resonator (MSR) consisting of an open-circuited resonator loaded with a T-shaped open stub and a pair of L-shaped open stubs, which together generate four resonant modes to enhance the filtering performance. The resonant frequencies can be conveniently tuned by adjusting the geometric parameters. For demonstration, an on-chip dual-band BPF operating at 61.7 GHz and 94.5 GHz was fabricated and measured, achieving 3-dB fractional bandwidths (FBWs) of 35.1 % and 24.4 %, respectively. The measured in-band insertion losses are below 1.1 dB and 1.2 dB, with return losses greater than 20 dB. The overall circuit occupies only 0.356 × 0.252 mm2, excluding input and output pads.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 107031 |
| 期刊 | Microelectronics Journal |
| 卷 | 169 |
| DOI | |
| 出版状态 | 已出版 - 3月 2026 |
| 已对外发布 | 是 |
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