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Microstructure and texture evolution of CeO2 buffer layers prepared via dip-coating sol-gel method on IBAD-YSZ/Hastelloy substrates

  • P. Du*
  • , S. S. Wang
  • , H. Chen
  • , Z. Wang
  • , J. C. Sun
  • , Z. Han
  • , W. Schmidt
  • , H. W. Neumuller
  • *此作品的通讯作者
  • Tsinghua University
  • Siemens

科研成果: 期刊稿件文章同行评审

摘要

We have fabricated CeO2 buffer layers on IBAD-YSZ/Hastelloy substrates via dip-coating sol-gel method using inorganic salts as starting materials. X-ray diffraction (XRD), scanning electron microscopy (SEM) and scanning probe microscope (SPM) were applied to investigate the influential factors in film formation and texture evolution. Flat, crack-free CeO2 films with sharp (0 0 2) c-axis orientation and good texture were obtained by carefully controlling the precursor solution quality, dip-coating and heating process. Compared with IBAD-YSZ/Hastelloy substrates, textures of CeO2 films were effectively improved.

源语言英语
页(从-至)580-583
页数4
期刊Physica C: Superconductivity and its Applications
463-465
SUPPL.
DOI
出版状态已出版 - 1 10月 2007
已对外发布

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