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Microstructural and optoelectronic properties of rf magnetron sputtered ZnO:(Ga,Ti) semiconductor thin films
T. Zhang
, Z. Zhong
*
, H. Wang
*
此作品的通讯作者
South-Central University for Nationalities
科研成果
:
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4
引用 (Scopus)
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Engineering
Thin Films
100%
Optoelectronics
100%
Magnetron
100%
Radio Frequency
100%
Microstructure
66%
Conductive
33%
Ray Diffraction
33%
Dielectrics
33%
Refractive Index
33%
Glass Substrate
33%
Deposited Film
33%
Energy Gap
33%
Oxide Film
33%
Figure of Merit
33%
Extinction Coefficient
33%
Polycrystalline
33%
Optical Spectrum
33%
Dissipation Factor
33%
Probe Point
33%
Physics
Optoelectronics
100%
Thin Films
100%
Magnetron
100%
X Ray Diffraction
33%
Refractivity
33%
Transmittance
33%
Permittivity
33%
Polycrystalline
33%
Magnetron Sputtering
33%
Spectrophotometer
33%
Grain Size
33%
Wurtzite
33%
Spectra
33%
Oxide Film
33%
Material Science
Film
100%
Thin Films
100%
ZnO
100%
X-Ray Diffraction
16%
Grain Size
16%
Refractive Index
16%
Magnetron Sputtering
16%
Electrical Resistivity
16%
Oxide Film
16%
Permittivity
16%