Micro-Defects in Monolayer MoS₂Studied by Low-Temperature Magneto-Raman Mapping

In this work, magneto-Raman mapping was performed on monolayer MoS2 at 4 K, which exhibited a prominent magnetic field-induced modulation of phonon intensity. Interestingly, structural microinhomogeneity in MoS2 was observed in the mapping images under certain magnetic fields, indicating the existence of lattice defects in monolayer MoS2. Remarkably, the magneto-optical Raman intensity for the defect zone was only 26% of that for the regular zone, which could be attributed to the scattered electron motion by lattice defects. These results provided a deeper understanding of the mechanisms behind the magneto-optical Raman effects in MoS2. Moreover, it was demonstrated that the low-temperature magneto-Raman mapping technique could be a highly sensitive tool to directly examine the microstructure in two-dimensional (2D) transition-metal dichalcogenides.