TY - JOUR
T1 - Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration
AU - Zhao, Yun
AU - Su, Hongyang
AU - Xu, Jianbing
AU - Chen, Shengru
AU - Liu, Peng
AU - Guo, Er Jia
AU - Lin, Yuanhua
AU - Tuller, Harry L.
AU - Chen, Di
N1 - Publisher Copyright:
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2023/8
Y1 - 2023/8
N2 - Oxygen non-stoichiometry profoundly impacts the electrical, magnetic, and catalytic properties of metal oxide. Limited by the low mass and volume of thin oxide films, conventional quantification methods, such as thermogravimetry, are not directly applicable. While chemical capacitance has been successfully applied to monitor oxygen non-stoichiometry in thin oxide films, detailed a-priori understanding of the defect chemistry is often very helpful in its interpretation. In this study, changes in non-stoichiometry in Pr doped CeO2 (PCO) thin films are measured by coulometric titration. I-V titration measurements are performed on electrochemical cells, over the temperature range from 550 to 700 ℃, oxygen partial pressure range from 10-4 to 0.21 atm, and bias range of -50 mV to 50 mV, to extract changes in stoichiometry. The results agree well with values obtained by chemical capacitance, demonstrating the utility in applying coulometric titration to investigate oxygen non-stoichiometry in oxide thin films.
AB - Oxygen non-stoichiometry profoundly impacts the electrical, magnetic, and catalytic properties of metal oxide. Limited by the low mass and volume of thin oxide films, conventional quantification methods, such as thermogravimetry, are not directly applicable. While chemical capacitance has been successfully applied to monitor oxygen non-stoichiometry in thin oxide films, detailed a-priori understanding of the defect chemistry is often very helpful in its interpretation. In this study, changes in non-stoichiometry in Pr doped CeO2 (PCO) thin films are measured by coulometric titration. I-V titration measurements are performed on electrochemical cells, over the temperature range from 550 to 700 ℃, oxygen partial pressure range from 10-4 to 0.21 atm, and bias range of -50 mV to 50 mV, to extract changes in stoichiometry. The results agree well with values obtained by chemical capacitance, demonstrating the utility in applying coulometric titration to investigate oxygen non-stoichiometry in oxide thin films.
KW - Coulometric titration
KW - High-temperature electrochemistry
KW - Oxide thin films
KW - Oxygen ion vacancies
KW - Praseodymium doped ceria
UR - https://www.scopus.com/pages/publications/85159641592
U2 - 10.1007/s10832-023-00309-x
DO - 10.1007/s10832-023-00309-x
M3 - Article
AN - SCOPUS:85159641592
SN - 1385-3449
VL - 51
SP - 28
EP - 36
JO - Journal of Electroceramics
JF - Journal of Electroceramics
IS - 1
ER -