@inproceedings{927bdc76caad44e4b3392e6126325c6f,
title = "Low-Threshold chip-scale aluminum nitride Raman laser",
abstract = "Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2{\texttimes}106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1\%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.",
keywords = "Epitaxial aluminum nitride, High-quality microring, On-chip Raman laser, Stimulated Raman scattering",
author = "Xianwen Liu and Changzheng Sun and Bing Xiong and Jian Wang and Lai Wang and Yanjun Han and Zhibiao Hao and Hongtao Li and Yi Luo and Jianchang Yan and Tongbo Wei and Yun Zhang and Junxi Wang",
note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",
year = "2016",
month = dec,
day = "2",
language = "English",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",
address = "United States",
}