摘要
Perovskite compounds have attracted recently great attention in photovoltaic research. The devices are typically fabricated using condensed or mesoporous TiO2 as the electron transport layer and 2,2′7,7′-tetrakis-(N,N-dip-methoxyphenylamine)9,9′- spirobifluorene as the hole transport layer. However, the high-temperature processing (450 C) requirement of the TiO2 layer could hinder the widespread adoption of the technology. In this report, we adopted a low-temperature processing technique to attain high-efficiency devices in both rigid and flexible substrates, using device structure substrate/ITO/PEDOT:PSS/ CH3NH3PbI3-xClx/PCBM/Al, where PEDOT:PSS and PCBM are used as hole and electron transport layers, respectively. Mixed halide perovskite, CH3NH3PbI3-xCl x, was used due to its long carrier lifetime and good electrical properties. All of these layers are solution-processed under 120 C. Based on the proposed device structure, power conversion efficiency (PCE) of 11.5% is obtained in rigid substrates (glass/ITO), and a 9.2% PCE is achieved for a polyethylene terephthalate/ITO flexible substrate.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 1674-1680 |
| 页数 | 7 |
| 期刊 | ACS Nano |
| 卷 | 8 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 25 2月 2014 |
| 已对外发布 | 是 |
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