Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao; Han Chun Wu; Shishir Kumar; Georg S. Duesberg; Yang Bo Zhou; Graham L.W. Cross; Igor V. Shvets; Da Peng Yu

doi:10.1002/adma.201104796

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Zhi Min Liao^*
, Han Chun Wu
, Shishir Kumar
, Georg S. Duesberg
, Yang Bo Zhou
, Graham L.W. Cross
, Igor V. Shvets
, Da Peng Yu

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

71 引用（Scopus）

摘要

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

源语言	英语
页（从-至）	1862-1866
页数	5
期刊	Advanced Materials
卷	24
期	14
DOI	https://doi.org/10.1002/adma.201104796
出版状态	已出版 - 10 4月 2012
已对外发布	是

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abstract = "A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60\% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.",

keywords = "anisotropic MR, magnetoresistance, multilayer graphene, temperature dependence, weak antilocalization",

author = "Liao, \{Zhi Min\} and Wu, \{Han Chun\} and Shishir Kumar and Duesberg, \{Georg S.\} and Zhou, \{Yang Bo\} and Cross, \{Graham L.W.\} and Shvets, \{Igor V.\} and Yu, \{Da Peng\}",

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AU - Liao, Zhi Min

AU - Wu, Han Chun

AU - Kumar, Shishir

AU - Duesberg, Georg S.

AU - Zhou, Yang Bo

AU - Cross, Graham L.W.

AU - Shvets, Igor V.

AU - Yu, Da Peng

PY - 2012/4/10

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N2 - A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

AB - A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

KW - anisotropic MR

KW - magnetoresistance

KW - multilayer graphene

KW - temperature dependence

KW - weak antilocalization

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JO - Advanced Materials

JF - Advanced Materials

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Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

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