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Junction temperature estimation model of insulated gate bipolar transistor power module in three-phase inverter

  • Beijing Institute of Technology

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

This paper proposes a junction temperature estimation method for IGBT power module in three-phase inverter through coupling the temperature-corrected power loss calculation model and Foster thermal model. Considering the structural characteristics of IGBT, the loss calculation model is established with full study about the influence rule of temperature, gate resistance and other factors on the loss. The instantaneous power loss can be calculated and applied to the thermal model, through which the temperature on that thermo cycle can be obtained and fed back to the power loss calculation model for calculation of next cycle. The coupling of the two models is implemented in Matlab/Simulink. The simulation result shows the model can meet the requirement of engineering design, and compared with the manufacturer's calculation method, it is more versatile and can reflect the fluctuation of the temperature under different load conditions, which is more favorable for monitoring the health of the device.

源语言英语
主期刊名Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
出版商Institute of Electrical and Electronics Engineers Inc.
1267-1272
页数6
ISBN(电子版)9781538611272
DOI
出版状态已出版 - 15 12月 2017
活动43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, 中国
期限: 29 10月 20171 11月 2017

出版系列

姓名Proceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
2017-January

会议

会议43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
国家/地区中国
Beijing
时期29/10/171/11/17

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