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Intrinsic and quantitative effects of in-plane strain on ferroelectric properties of Mn-doped BiFeO3 epitaxial films by in situ inducing strain in substrates

  • M. M. Yang
  • , X. Q. Zhao
  • , J. Wang
  • , Q. X. Zhu
  • , J. X. Zhang
  • , X. M. Li
  • , H. S. Luo
  • , X. G. Li
  • , R. K. Zheng
  • CAS - Shanghai Institute of Ceramics
  • Beijing Normal University
  • University of Science and Technology of China

科研成果: 期刊稿件文章同行评审

摘要

We report in situ manipulation of the in-plane strain εxx(BFMO) and coercive field EC(BFMO) of BiFe0.95Mn0.05O3 (BFMO) films epitaxially grown on La0.7Sr0.3MnO 3 film buffered 0.71Pb(Mg1/3Nb2/3)O 3-0.29PbTiO3 (PMN-PT) substrates. PMN-PT poling-induced strain is effectively transferred to BiFe0.95Mn0.05O 3 films and enhances εxx(BFMO) and EC(BFMO), with a gauge factor (ΔEC(BFMO)/EC(BFMO))/(δεxx) ∼-25 and -326 for the BFMO(001) and BFMO(111) films, respectively. Based on the strain dependence of EC(BFMO), we established a quantitative relationship between EC(BFMO) and εxx(BFMO). Using ferroelastic strain of PMN-PT, we achieved reversible and non-volatile modulation of strain and EC(BFMO) of BFMO films, providing an approach for non-volatile and reversible turning of strain and physical properties of ferroelectric films.

源语言英语
文章编号052902
期刊Applied Physics Letters
104
5
DOI
出版状态已出版 - 3 2月 2014
已对外发布

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