InGaO₃(ZnO) Superlattice Nanowires for High-Performance Ultraviolet Photodetectors

Superlattice nanowires show promise for nanoelectronic and optoelectronic devices because they can increase the versatility and power of modulating electronic transport, optical properties. In this study, InGaO₃(ZnO) superlattice nanowires via a facile vapor transport technology are successfully synthesized. Then field-effect transistors and ultraviolet photodetectors are manufactured based on these NWs. The atomic ratios of In:Zn have a great effect on the performance of the as-fabricated devices. Such a novel superlattice nanowire- based individual-NW devices exhibit excellent sensitivity to ultraviolet light irradiation with a fast response speed of 0.3 s. In addition, the as-prepared flexible devices fabricated on PET substrates show excellent robustness and mechanical flexibility under various bending curvatures and hundreds of bending cycles. These results indicate that InGaO₃(ZnO) superlattice NWs are promising candidates for future electronic and optoelectronic devices.