Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao; Libin Tang; Shengyi Yang; Kar Seng Teng; Shu Ping Lau

doi:10.1364/OL.385280

Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao
, Libin Tang^*
, Shengyi Yang
, Kar Seng Teng
, Shu Ping Lau

^*此作品的通讯作者

物理学院

Beijing Institute of Technology
Kunming Metallurgy College
Kunming Institute of Physics
Yunnan Key Laboratory of Advanced Photoelectronic Materials & Devices
Swansea University
Hong Kong Polytechnic University

科研成果: 期刊稿件 › 文章 › 同行评审

17 引用（Scopus）

摘要

GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼10¹³ Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

源语言	英语
页（从-至）	1108-1111
页数	4
期刊	Optics Letters
卷	45
期	5
DOI	https://doi.org/10.1364/OL.385280
出版状态	已出版 - 1 3月 2020

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title = "Infrared photodetector based on GeTe nanofilms with high performance",

abstract = "GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.",

author = "Yiqun Zhao and Libin Tang and Shengyi Yang and Teng, \{Kar Seng\} and Lau, \{Shu Ping\}",

note = "Publisher Copyright: {\textcopyright} 2020 Optical Society of America.",

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doi = "10.1364/OL.385280",

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AU - Zhao, Yiqun

AU - Tang, Libin

AU - Yang, Shengyi

AU - Teng, Kar Seng

AU - Lau, Shu Ping

PY - 2020/3/1

Y1 - 2020/3/1

N2 - GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

AB - GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

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JO - Optics Letters

JF - Optics Letters

IS - 5

ER -

Infrared photodetector based on GeTe nanofilms with high performance

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