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Impacts of optical factors on L pattern in ArF immersion lithography

  • CAS - Institute of Electrical Engineering
  • University of Chinese Academy of Sciences

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The impacts of optical factors including flare, polarized light and geometrical aberration on 65 nm L pattern in ArF immersion lithography were calculated using the commercial software Prolith 9.0 and the impact rules of these optical factors on imaging quality and lithography performances of L pattern were studied. The results show that the flare leads to reduction of image contrast, shrinkage of line-width and increment of pattern place error. The astigmatism, coma and spherical aberration result in decrement of the image contrast, increment of line-width and pattern place error. An appropriate polarized light can be applied to improve the image contrast and it also can restrain sensitivities of L pattern to flare and aberration.

源语言英语
页(从-至)14-17+39
期刊Weixi Jiagong Jishu/Microfabrication Technology
期3
出版状态已出版 - 6月 2006
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