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Impact of non-uniform polarized illumination on hyper-NA lithography

  • Xuejia Guo
  • , Yanqiu Li*
  • *此作品的通讯作者
  • Beijing Institute of Technology

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Conventional top-hat model of polarized illumination loses its accuracy in lithography simulation which cannot meet the requirements of 45nm node lithography and beyond. The simulation error of top-hat model in evaluating lithography performance cannot be neglected anymore. In this paper, we apply a Gaussian model to represent the non-uniform degree of polarization (NU-DOP) distribute across the pupil and evaluate its impact on the CD uniformity under various conditions. The result shows that the model can accurately evaluate the non-uniform property of polarized illuminator. When the mean NU-DOP approaches to 1, the effect of non-uniformity becomes more pronounced. Furthermore, the non-uniform of DOP distribution causes more CD error at defocus position.

源语言英语
主期刊名Optical Microlithography XXV
DOI
出版状态已出版 - 2012
活动Optical Microlithography XXV - San Jose, CA, 美国
期限: 13 2月 201216 2月 2012

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
8326
ISSN(印刷版)0277-786X

会议

会议Optical Microlithography XXV
国家/地区美国
San Jose, CA
时期13/02/1216/02/12

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