@inproceedings{8f4914826d374e79b048f8e877f1dcf5,
title = "High Uniformity Ferroelectric MoS2Nonvolatile Memory Array",
abstract = "Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer MoS2 FeFET devices array through coupling ferroelectric P(VDF-TrFE) as the dielectric layer. The MoS2 FeFET device demonstrated excellent storage performance, including high on/off current ratios (> 106, a broad memory window (15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos2,the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.",
keywords = "P(VDF-TrFE), devices array, ferroelectric field effect transistor, large-scale, non-volatile memory",
author = "Chunyang Li and Lu Li and Zhongyi Li and Fanqing Zhang and Lixin Dong and Jing Zhao",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022 ; Conference date: 08-08-2022 Through 12-08-2022",
year = "2022",
doi = "10.1109/3M-NANO56083.2022.9941686",
language = "English",
series = "2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "247--251",
editor = "Zhidong Wang and Li Lei and Fan Yang",
booktitle = "2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022 - Proceedings",
address = "United States",
}