High-Resolution Fabrication of One-Dimensional SWCNTs Transistors Using Thermal Scanning Probe Lithography

One-dimensional materials, such as carbon nanotubes (CNTs), are promising building blocks for next-generation nano-electronic devices, yet their device fabrication remains challenging due to damage and alignment limitations in conventional lithography. Here, we demonstrate a single-walled carbon nanotube (SWCNT) one-dimensional transistor fabrication approach using scanning thermal probe lithography (t-SPL). By combining atomic force microscopy (AFM) localization with a bilayer resist wet lift-off process, precisely aligned source-drain electrodes are fabricated without exposing the CNT channel to high-energy irradiation. The resulting CNT transistors exhibit clear p-type behavior with on/off current ratios exceeding 10⁵ at room temperature and maintain stable electrical performance after long-term storage. This work highlights the advantages of t-SPL as a high-resolution, low-damage fabrication technique for CNT-based nano-electronic devices and provides a scalable processing route for one-dimensional materials.