High performance photodetector based on Pd-single layer MoS₂ Schottky junction

Due to excellent photoelectric property of single layer molybdenum disulphide (SL MoS₂), different kinds of photodetectors based on SL MoS₂ have been reported. Although high photosensitivity was obtained, the rising and decay time of photocurrent were relatively large (>300 ms) when the current reached up to μA order. In this paper, we demonstrate a high sensitive and fast barrier type photodetector based on Pd-SL MoS₂ Schottky junction. The photosensitivity can reach up to 0.88 A/W at 425 nm laser. Compared with SL MoS₂ photodetectors based on ohmic contact, our device shows much shorter rising and a decay time of 24.7 ms and 24.5 ms, respectively, exhibiting the merit of barrier type photodetector.