摘要
Kagome metals AV3Sb5 (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV3Sb5/WSe2 heterojunctions. A high-quality Schottky interface readily forms between KV3Sb5 and WSe2, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA W−1, and a fast response time of 18.3 µs. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV3Sb5-based van der Waals heterostructures for high-performance photodetection.
| 源语言 | 英语 |
|---|---|
| 期刊 | Small |
| DOI | |
| 出版状态 | 已接受/待刊 - 2026 |
| 已对外发布 | 是 |
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