@inproceedings{011578c122074779b024579e70eed5f9,
title = "High performance GaN based switching and linear power amplifier for airborne application",
abstract = "Considering the requirements of amplifiers for modern communication systems and having different topology variants with different advantages or disadvantages over each other, this paper presents experimental comparison between Class AB and High efficiency Class F-1 power amplifiers using GaN based Transistors. The results show that Class F-1 power amplifier exhibit higher output power and higher efficiency but degraded linearity response as compared to class AB power amplifier. For comparison, the inverse class F and class AB power amplifiers were designed and implemented at 2.14 GHz using GaN Hemt. Measured performance showed 7\% higher power added efficiency along with 0.3 dB increase in output power for inverse class F power amplifier.",
author = "Dhanyal, \{Hamid Raza\} and Weidong Hu and Ali Ahmed and Hamza Nawaz and Waseem Shahzad",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 ; Conference date: 17-12-2019 Through 20-12-2019",
year = "2019",
month = dec,
doi = "10.1109/PIERS-Fall48861.2019.9021854",
language = "English",
series = "2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3278--3282",
booktitle = "2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings",
address = "United States",
}